The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calculated using the 2D finite difference time domain (FDTD) algorithm and the scattering matrix method (SMM). The periods and etch depth of the grating parameters have been optimized. A board area laser diode (BA-LD) with high-order diffraction gratings has been designed and fabricated. At output powers up to 10.5 W, the measured spectral width of full width at half maximum (FWHM) is less than 0.5 nm. The results demonstrate that the designed high-order surface gratings can effectively narrow the spectral width of multimode semiconductor lasers at high output power.

搭建了基于半导体可饱和吸收镜（SESAM）锁模的全保偏皮秒脉冲光纤激光器，对比分析了以多量子阱和体材料作为可饱和吸收层的SESAM对锁模激光器输出特性的影响。实验结果表明，多量子阱和体材料SESAM均可实现稳定的自启动锁模。随着量子阱周期数的增加，SESAM调制深度增大，激光器输出脉冲宽度变窄，具有更高的输出功率和更大的锁模区间。但量子阱周期数过高的SESAM具有较大非饱和损耗，使得相同泵浦功率下输出功率降低。在相同调制深度下，体材料SESAM的非饱和损耗偏大，降低了输出功率和光光转化效率，但对脉冲的窄化作用更显著。SESAM对输出脉冲的波长和光谱宽度无显著影响，主要受光纤布拉格光栅（FBG）控制。本文对SESAM的设计与选型具有一定指导意义。

骨科钛内置物存在感染的风险, 需要开发具有抗菌性、生物相容性且不易产生耐药性的表面涂层。通过电泳沉积15、30、45、60 s在微弧氧化(MAO)的钛表面制备了4组纳米氧化镁(MgO)涂层。MgO颗粒在MAO表面形成均匀涂层, 覆盖率随电泳时间延长。与金黄色葡萄球菌共培养6 h后, 4组样品抗菌率分别为1%、69%、83%、84%; 共培养24 h后抗菌率分别为81%、86%、89%、98%。显微观察发现MgO沉积样品表面黏附细菌密度、活细菌比例均随沉积时间延长而减少。与小鼠成骨细胞共培养1 d后, 4组样品存活率(相对空白孔板中所接种细胞)分别为108%、89%、53%、27%, 5 d后分别为139%、117%、112%、66%。荧光显微观察发现MAO样品表面未见死细胞, 而MgO沉积样品表面死细胞比例随沉积时间延长而增加, 但在实验周期(5 d)内均<5%。本研究表明电泳沉积30 s制备的MgO涂层具有良好的体外抗菌性和生物相容性。

Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO₂ film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.